Daniel Worledge
Distinguished Research Scientist and the Senior Manager of MRAM, IBM
Co-Chair, CMS MRAM Alliance SIG, SNIA
Daniel Worledge is a Distinguished Research Scientist and the Senior Manager of MRAM at the IBM Almaden Research Center. He leads teams in Yorktown Heights and Albany in New York, and in San Jose in California, doing scientific research and technology development of magnetoresistive random access memory (MRAM). He made the first perpendicular CoFeB|MgO tunnel junctions and led the IBM team that demonstrated the first integrated perpendicular Spin-Transfer-Torque MRAM, with ultra-low write-error-rate. Dr. Worledge invented and developed Current-in-Plane Tunneling as a fast turn-around measurement method for magnetic tunnel junctions. He received a BA in Physics and Applied Mathematics from UC Berkeley in 1995 and a PhD in Applied Physics from Stanford University in 2000, with a thesis on spin-polarized tunneling in oxide ferromagnets. Dr. Worledge received the 2025 IEEE Cledo Brunetti Award, is a Fellow of APS and IEEE, and is a member of the National Academy of Engineering.