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Introduction to STT-MRAM

San Tomas + Lawrence

Mon Sep 28 | 4:10pm

Abstract

Spin-Transfer Torque MRAM (STT-MRAM) has become a compelling and widely deployed non-volatile memory technology across a growing range of applications. This talk provides a technical introduction to how STT-MRAM works, including its underlying physics and device operation, and why it offers unique advantages compared to conventional memory technologies.  We will explore four key application domains where STT-MRAM is already making an impact and where it is poised to grow in the near future, spanning standalone and embedded products. Particular attention will be given to STT-MRAM’s intrinsic robustness, including its significantly higher immunity to magnetic fields—more than an order of magnitude greater than hard disk drives.  The session will conclude with a perspective on the current state of MRAM deployment and the roadmap ahead, highlighting ongoing developments and opportunities for adoption in next-generation AI systems.