STT-MRAM, a High Performance Complement to Flash Memory

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Publish Date: 
Tuesday, August 6, 2019
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Abstract: 

As NAND Flash based storage systems evolve to higher densities, managing I/O determinism has become a challenge. One approach to managing this issue has been to use a DRAM based write cache with capacitors to manage backup of data in flight on power loss. STT-MRAM is a non-volatile memory that offers high bandwidth writes with high endurance. These attributes, which complement the limits of Flash technology, offer a solution as a high density non-volatile cache without the limits inherent to the use of capacitors. This paper will provide an overview of STT-MRAM technology and review some applications for STT-MRAM products.

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