The Future Technology for NAND Flash

The NAND Flash technology has been fueling various data storage systems for the last three decades by advancing the technology and lowering the cost per bit. However, due to down-scaling, the continuous reliability and performance degradation of raw NAND Flash storage is causing major overhead and performance issues at the data storage system-level. Complex algorithms and advanced architectures of memory controllers will not be sufficient to work around the inherent limitations of NAND Flash.

Crossbar’s 3D ReRAM CMOS compatible technology has superior characteristics. It will provide storage systems with unprecedented density, much faster read and write performance, no block erase architecture, small page alterability and higher retention and reliability. Memory architectural features of Crossbar ReRAM-based devices will provide emerging storage systems with significant performance, simplification and reduction in system overhead and cost. In this presentation, we will review NAND and Crossbar ReRAM technology differentiating characteristics and product features, and demonstrates Data Storage system performance calculations utilizing NAND and Crossbar ReRAM.