Abstract
Spin-Transfer Torque MRAM (STT-MRAM) is an emerging memory technology that offers a unique combination of non-volatility, high endurance, and compatibility with standard CMOS processing. This webinar provides an accessible overview of STT-MRAM, including its operating principles and key advantages. We will discuss the current application landscape and highlight examples of commercially available products. The session will also cover anticipated near-term advancements in the technology and the directions they enable. Particular emphasis will be placed on the robustness of STT-MRAM, including its strong data retention at elevated temperatures and significantly higher immunity to magnetic fields compared to hard disk drives. Finally, we will briefly touch on ongoing research and future opportunities for further innovation.