The Write Endurance of SSDs - Is MLC NAND Fit for Data Centers?

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Author(s)/Presenter(s):

Moshe Selfin

Library Content Type

Presentation

Library Release Date

Focus Areas

Abstract

Migrating from Single-Level-Cell (SLC) to Multi-Level-Cell (MLC) NAND reduces SSD bill-of-material cost by a factor of 3. The major limitation for this migration in data center environment is write endurance. This presentation explores the gap in write endurance between MLC NAND and the requirement of data center environment, describes methods to bridge this gap, and presents a new approach based on signal processing, which yields an MLC-based SSD with write endurance of SLC NAND.

Learning Objectives

Analyzing the write endurance requirement of data center environment
Analyzing the write endurance of current and future MLC and SLC NAND, and main driving factors
Write amplification and SSD architecture
Data compression and encryption
Memory Signal Processing