Delivering Nanosecond-Class Persistent Storage

webinar

Author(s)/Presenter(s):

Steffen Hellmold

Library Content Type

Presentation

Library Release Date

Focus Areas

Abstract

NAND flash solves many problems in storage with its non-volatility and high IOPS performance. Designers can always deliver more IOPS with NAND assuming unlimited power and space. However, designers can’t deliver nanosecond-class response times with NAND because the medium isn’t fast enough. Spin Torque MRAM complements NAND flash and forms a persistent replacement for battery or capacitor-backed DRAM, delivering higher IOPS/$ and IOPS/W than NAND flash with nanosecond-class response times. In this presentation, the speaker will discuss how ST-MRAM is enabling a latency revolution in storage, just as NAND flash delivered an IOPS revolution.

Learning Objectives

ST-MRAM, introducing high performance persistent storage
How ST-MRAM complements NAND flash and replaces BB-DRAM
Applications for ST-MRAM, exploring the possibilities with prototypes